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IS42S16100F-7BL备选型号: IS42S16400J-7B2LI

IS42S16100F-7BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 16M-Bit 1Mx16 3.3V 60-Pin Mini-BGA

表面贴装
表面贴装
60-TFBGA
60
Volatile
0°C~70°C TA
Tray
e1
yes
Obsolete
3 (168 Hours)
60
EAR99
锡银铜
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
BOTTOM
260
1
3.3V
0.65mm
40
60
不合格
3.3V
3.6V
3V
16Mb 1M x 16
1
100mA
SYNCHRONOUS
143MHz
5.5ns
DRAM
Parallel
16b
1MX16
3-STATE
16
12b
16 Mb
0.002A
COMMON
2048
1248FP
1248
10.1mm
1.2mm
符合RoHS标准
-
-
-
-
-
IS42S16400J-7B2LI

ISSI, Integrated Silicon Solution Inc

DRAM 64M, 3.3V, 143Mhz SDR SDRAM

表面贴装
表面贴装
60-TFBGA
60
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
60
EAR99
-
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
BOTTOM
-
1
3.3V
0.65mm
-
60
-
3.3V
3.6V
3V
64Mb 4M x 16
1
90mA
-
143MHz
5.4ns
DRAM
Parallel
16b
4MX16
3-STATE
16
14b
64 Mb
-
COMMON
4096
1248FP
1248
10.1mm
1.2mm
ROHS3 Compliant
6 Weeks
Copper, Silver, Tin
NO
YES
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA	对比
	IS42S16400J-7B2LI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 64M, 3.3V, 143Mhz SDR SDRAM	对比
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