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IS42S16100H-7BLI备选型号: AS6C1008-55BIN

IS42S16100H-7BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 60TFBGA

6 Weeks
表面贴装
60-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
60
EAR99
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.65mm
R-PBGA-B60
不合格
3.6V
3.3V
3V
16Mb 1M x 16
1
SYNCHRONOUS
143MHz
5.5ns
DRAM
Parallel
1MX16
3-STATE
16
0.0035A
16777216 bit
COMMON
2048
1248FP
1248
10.1mm
1.2mm
6.4mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
AS6C1008-55BIN

Alliance Memory, Inc.

SRAM Chip Async Single 3V 1M-Bit 128K x 8 55ns

8 Weeks
表面贴装
36-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
36
EAR99
-
2.7V~5.5V
BOTTOM
1
3V
0.75mm
-
-
5.5V
3/5V
2.7V
1Mb 128K x 8
1
-
-
-
SRAM
Parallel
-
3-STATE
8
0.000003A
-
COMMON
-
-
-
8mm
-
-
ROHS3 Compliant
36
2006
yes
260
40
36
3V
55ns
17b
1 Mb
55 ns
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA	对比
	IS42S16400J-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA	对比
	AS6C1008-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM Chip Async Single 3V 1M-Bit 128K x 8 55ns	对比