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IS42S16100H-7TLI备选型号: AS4C1M16S-7TCNTR

IS42S16100H-7TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 50TSOP II

6 Weeks
表面贴装
50-TSOP (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
50
EAR99
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
3V~3.6V
DUAL
1
3.3V
0.8mm
R-PDSO-G50
不合格
3.6V
3.3V
3V
16Mb 1M x 16
1
SYNCHRONOUS
143MHz
5.5ns
DRAM
Parallel
1MX16
3-STATE
16
0.0035A
16777216 bit
COMMON
2048
1248FP
1248
20.95mm
1.2mm
10.16mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
AS4C1M16S-7TCNTR

Alliance Memory, Inc.

DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM

8 Weeks
表面贴装
50-TSOP (0.400, 10.16mm Width)
YES
Volatile
0°C~70°C TA
Tape & Reel (TR)
活跃
3 (168 Hours)
50
EAR99
AUTO/SELF REFRESH
3V~3.6V
DUAL
1
3.3V
0.8mm
-
-
3.6V
-
3V
16Mb 1M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
1MX16
-
16
-
-
-
-
-
-
20.95mm
1.2mm
-
ROHS3 Compliant
50
2015
e3/e6
yes
PURE MATTE TIN/TIN BISMUTH
8542.32.00.02
260
40
50
16b
2ns
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7TL-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	64M, 3.3V, SDRAM, 4MX16, 143MH	对比
	AS4C1M16S-7TCNTR	Alliance Memory, Inc.	存储器	50-TSOP (0.400, 10.16mm Width)	DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM	对比
	IS42S16400J-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比