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IS42S32800J-6BLI备选型号: IS42S16160J-6BLI

IS42S32800J-6BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 90TFBGA

8 Weeks
表面贴装
90-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
e1
活跃
3 (168 Hours)
90
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
未说明
1
3.3V
0.8mm
未说明
R-PBGA-B90
3.6V
3V
256Mb 8M x 32
1
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
8MX32
32
268435456 bit
1.2mm
8mm
13mm
ROHS3 Compliant
IS42S16160J-6BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

6 Weeks
表面贴装
54-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
e1
活跃
3 (168 Hours)
54
Tin/Silver/Copper (Sn/Ag/Cu)
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
3V~3.6V
BOTTOM
未说明
1
3.3V
0.8mm
未说明
S-PBGA-B54
3.6V
3V
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
16MX16
16
268435456 bit
1.2mm
8mm
8mm
ROHS3 Compliant
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32400F-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin WBGA	对比
	IS42S16160J-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	IC DRAM 256M PARALLEL 54TFBGA	对比