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IS42SM32160E-75BLI备选型号: IS42S32160D-6BL

IS42SM32160E-75BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip Mobile SDRAM 512Mbit 16Mx32 3.3V 90-Pin TFBGA

12 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
120mA
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
3.3V
BOTTOM
1
0.8mm
120mA
512Mb 16M x 32
1
SYNCHRONOUS
133MHz
6ns
DRAM
Parallel
32b
16MX32
32
15b
512 Mb
3.6V
2.7V
13mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS42S32160D-6BL

ISSI, Integrated Silicon Solution Inc

DRAM 512M 16Mx32 166Mhz SDR SDRAM, 3.3V

8 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
245mA
0°C~70°C TA
Tray
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
3.3V
BOTTOM
1
0.8mm
-
512Mb 16M x 32
1
-
166MHz
5.4ns
DRAM
Parallel
32b
16MX32
32
15b
512 Mb
3.6V
3V
13mm
1.2mm
ROHS3 Compliant
EAR99
8542.32.00.28
3-STATE
0.004A
COMMON
8192
1248FP
1248
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32160D-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM 512M 16Mx32 166Mhz SDR SDRAM, 3.3V	对比
	IS42S32160D-6BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM 512M 16Mx32 166Mhz SDR SDRAM, 3.3V	对比