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IS42VM16320E-75BLI备选型号: IS42S16320D-7BL

IS42VM16320E-75BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip Mobile SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TFBGA

12 Weeks
表面贴装
表面贴装
54-TFBGA
54
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
54
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
3.3V
0.8mm
3.3V
3.6V
2.7V
512Mb 32M x 16
1
100mA
SYNCHRONOUS
133MHz
6ns
DRAM
Parallel
32MX16
16
15b
512 Mb
8mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16320D-7BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TFBGA

6 Weeks
表面贴装
表面贴装
54-TFBGA
54
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
54
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.8mm
3.3V
3.6V
3V
512Mb 32M x 16
1
160mA
-
143MHz
5.4ns
DRAM
Parallel
32MX16
16
15b
512 Mb
13mm
1.2mm
ROHS3 Compliant
Copper, Silver, Tin
e1
yes
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
260
10
54
16b
3-STATE
0.004A
COMMON
8192
1248FP
1248
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16320D-6BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TFBGA	对比
	IS42S16320D-7BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TFBGA	对比