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IS43DR16320C-3DBLI备选型号: IS46DR16320D-3DBLA1

IS43DR16320C-3DBLI

ISSI, Integrated Silicon Solution Inc

DRAM 512Mb, 1.8V, 333MHz 32Mx16 DDR2 SDRAM

8 Weeks
表面贴装
表面贴装
84-TFBGA
84
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
84
AUTO/SELF REFRESH
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
1.8V
1.9V
1.7V
512Mb 32M x 16
1
250mA
333MHz
450ps
DRAM
Parallel
16b
32MX16
3-STATE
16
15ns
15b
512 Mb
0.011A
COMMON
8192
48
48
12.5mm
1.2mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS46DR16320D-3DBLA1

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin TWBGA

8 Weeks
-
表面贴装
84-TFBGA
84
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
84
可编程赌场延迟
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
1.8V
1.9V
1.7V
512Mb 32M x 16
1
-
333MHz
450ps
DRAM
Parallel
-
32MX16
3-STATE
16
15ns
13b
512 Mb
0.025A
COMMON
8192
48
48
12.5mm
1.2mm
-
ROHS3 Compliant
YES
e1
EAR99
锡银铜
8542.32.00.28
未说明
未说明
不合格
SYNCHRONOUS
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR86400D-3DBLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR2 SDRAM 512M-Bit 64M x 8 1.8V 60-Pin TWBGA	对比
	IS46DR16320D-3DBLA1	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin TWBGA	对比