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IS43DR16640B-25DBL-TR备选型号: IS43DR16320D-3DBLI

IS43DR16640B-25DBL-TR

ISSI, Integrated Silicon Solution Inc

DRAM 1G (64Mx16) 400MHz DDR2 1.8v

8 Weeks
表面贴装
84-TFBGA
YES
84
Volatile
0°C~70°C TA
Tape & Reel (TR)
活跃
3 (168 Hours)
84
1.7V~1.9V
BOTTOM
1.8V
0.8mm
不合格
1.8V
1Gb 64M x 16
400MHz
400ps
DRAM
Parallel
16b
64MX16
3-STATE
16
15ns
0.015A
1073741824 bit
COMMON
8192
48
48
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS43DR16320D-3DBLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin TW-BGA

8 Weeks
表面贴装
84-TFBGA
-
84
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
84
1.7V~1.9V
BOTTOM
1.8V
0.8mm
不合格
-
512Mb 32M x 16
333MHz
450ps
DRAM
Parallel
-
32MX16
3-STATE
16
15ns
0.025A
-
COMMON
8192
48
48
ROHS3 Compliant
表面贴装
e1
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
可编程赌场延迟
8542.32.00.28
未说明
1
未说明
1.8V
1.9V
1.7V
1
230mA
SYNCHRONOUS
15b
512 Mb
12.5mm
1.2mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16320D-3DBLI	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin TW-BGA	对比
	IS43DR16160B-3DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 256Mb, 1.8V, 333MHz 16Mx16 DDR2 SDRAM	对比