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IS43DR16640B-3DBL备选型号: IS43DR16320C-3DBL

IS43DR16640B-3DBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR2 SDRAM 1Gbit 64M X 16 1.8V 84-Pin TWBGA Tray

8 Weeks
表面贴装
表面贴装
84-TFBGA
84
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
84
EAR99
AUTO/SELF REFRESH
8542.32.00.32
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
不合格
1.8V
1.9V
1.7V
1Gb 64M x 16
1
220mA
SYNCHRONOUS
333MHz
450ps
DRAM
Parallel
16b
64MX16
3-STATE
16
15ns
16b
1 Gb
0.015A
COMMON
8192
48
48
12.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
IS43DR16320C-3DBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin TW-BGA

8 Weeks
表面贴装
表面贴装
84-TFBGA
84
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
84
-
AUTO/SELF REFRESH
-
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
-
1.8V
1.9V
1.7V
512Mb 32M x 16
1
250mA
-
333MHz
450ps
DRAM
Parallel
16b
32MX16
3-STATE
16
15ns
15b
512 Mb
0.011A
COMMON
8192
48
48
12.5mm
1.2mm
ROHS3 Compliant
Copper, Silver, Tin
120mA
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16160B-3DBLI	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 256Mb, 1.8V, 333MHz 16Mx16 DDR2 SDRAM	对比
	IS43DR16320C-3DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin TW-BGA	对比
	IS43DR16160B-37CBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM	对比