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IS43LR16160G-6BL备选型号: IS42S16160G-6BLI

IS43LR16160G-6BL

ISSI, Integrated Silicon Solution Inc

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM

14 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
110mA
0°C~70°C TA
Tray
活跃
3 (168 Hours)
60
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5.5ns
DRAM
Parallel
16b
16MX16
16
15ns
15b
256 Mb
1.95V
1.7V
10mm
1.1mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
IS42S16160G-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M 16Mx16 166Mhz SDR SDRAM, 3.3V

6 Weeks
表面贴装
表面贴装
54-TFBGA
54
Volatile
160mA
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
54
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
0.8mm
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
16b
16MX16
16
-
15b
256 Mb
3.6V
3V
8mm
1.2mm
ROHS3 Compliant
EAR99
未说明
未说明
不合格
3-STATE
0.004A
COMMON
8192
1248FP
1248
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图片	产品型号	品牌	分类	封装	描述	对比
	IS46R16160D-6BLA1	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM	对比
	IS42S16160G-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 256M 16Mx16 166Mhz SDR SDRAM, 3.3V	对比