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IS43LR32320B-6BLI备选型号: IS43DR16640B-3DBLI

IS43LR32320B-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip Mobile-DDR SDRAM 1G-Bit 32Mx32 1.8V 90-Pin TFBGA

14 Weeks
表面贴装
表面贴装
90-LFBGA
90
Volatile
200mA
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
不合格
64Mb 2M x 32
1
SYNCHRONOUS
166MHz
5.5ns
DRAM
Parallel
32MX32
3-STATE
32
15ns
15b
1 Gb
0.00002A
COMMON
1.95V
1.7V
8192
24816
24816
13mm
1.45mm
ROHS3 Compliant
-
-
-
-
-
IS43DR16640B-3DBLI

ISSI, Integrated Silicon Solution Inc

DRAM 1G (64Mx16) 333MHz 1.8v DDR2 SDRAM

8 Weeks
表面贴装
表面贴装
84-TFBGA
84
Volatile
220mA
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
84
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
-
1Gb 64M x 16
1
-
333MHz
450ps
DRAM
Parallel
64MX16
3-STATE
16
15ns
16b
1 Gb
0.015A
COMMON
1.9V
1.7V
8192
48
48
12.5mm
1.2mm
ROHS3 Compliant
Copper, Silver, Tin
EAR99
8542.32.00.32
16b
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS46DR16640B-25DBLA2	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 1G (64Mx16) 400MHz 1.8v DDR2 SDRAM	对比
	IS46DR16640B-3DBLA2	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TW-BGA	对比