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IS43R16160F-6BL备选型号: IS43LR16160G-6BLI

IS43R16160F-6BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA

8 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
60-TFBGA
60
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
60
AUTO/SELF REFRESH
2.3V~2.7V
BOTTOM
1
2.5V
1mm
2.5V
2.7V
2.3V
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
700ps
DRAM
Parallel
16b
16MX16
16
15ns
13b
256 Mb
13mm
1.2mm
ROHS3 Compliant
-
-
IS43LR16160G-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM

14 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
60-TFBGA
60
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
60
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
1.8V
1.95V
1.7V
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5.5ns
DRAM
Parallel
16b
16MX16
16
15ns
13b
256 Mb
10mm
1.1mm
ROHS3 Compliant
e1
Tin/Silver/Copper (Sn/Ag/Cu)
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图片	产品型号	品牌	分类	封装	描述	对比
	IS46R16160D-5BLA1	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA	对比
	IS43LR16160G-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM	对比