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IS43R32160D-5BL备选型号: IS43R32800D-5BLI

IS43R32160D-5BL

ISSI, Integrated Silicon Solution Inc

DRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM

8 Weeks
表面贴装
144-LFBGA
YES
144
Volatile
0°C~70°C TA
Tray
e1
yes
活跃
3 (168 Hours)
144
EAR99
锡银铜
AUTO/SELF REFRESH
8542.32.00.28
2.5V~2.7V
BOTTOM
260
1
2.6V
0.8mm
40
144
不合格
2.7V
2.6V
2.5V
512Mb 16M x 32
1
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
32b
16MX32
3-STATE
32
15ns
0.025A
536870912 bit
COMMON
8192
248
248
12mm
1.4mm
ROHS3 Compliant
-
-
-
-
-
-
IS43R32800D-5BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
144-LFBGA
-
144
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
144
EAR99
-
AUTO/SELF REFRESH
8542.32.00.24
2.3V~2.7V
BOTTOM
-
1
2.5V
0.8mm
-
144
-
2.7V
-
2.3V
256Mb 8M x 32
1
-
200MHz
700ps
DRAM
Parallel
32b
8MX32
3-STATE
32
15ns
0.005A
-
COMMON
4096
248
248
12mm
1.4mm
ROHS3 Compliant
表面贴装
2.5V
480mA
14b
256 Mb
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43R32400E-5BL	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM	对比
	IS43R32400E-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM	对比
	IS43R32800D-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM	对比