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IS43R32400E-4BL备选型号: 71V35761SA183BQG

IS43R32400E-4BL

ISSI, Integrated Silicon Solution Inc

DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
144-LFBGA
YES
144
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
144
AUTO/SELF REFRESH
2.4V~2.6V
BOTTOM
260
1
2.5V
0.8mm
未说明
2.6V
2.4V
128Mb 4M x 32
1
SYNCHRONOUS
250MHz
700ps
DRAM
Parallel
32b
4MX32
32
16ns
134217728 bit
12mm
1.4mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V35761SA183BQG

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.3ns 165-Pin FBGA

11 Weeks
-
FBGA
-
165
183MHz
-
-
活跃
3 (168 Hours)
165
流水线结构
-
BOTTOM
260
1
3.3V
-
30
-
-
512kB
1
-
-
3.3 ns
-
-
-
-
-
-
-
15mm
-
符合RoHS标准
表面贴装
2009
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
70°C
0°C
BALL
183MHz
165
3.3V
COMMERCIAL
Parallel
3.465V
3.135V
340mA
3-STATE
17b
4.5 Mb
0.03A
COMMON
Synchronous
36b
13mm
1.2mm
无
无铅
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	IS43R32800D-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM	对比
	IS61NLP25636A-200B3I	ISSI, Integrated Silicon Solution Inc	存储器	165-TFBGA	IC SRAM 9M PARALLEL 165TFBGA	对比
	71V35761SA183BQG	Integrated Device Technology (IDT)	存储器	FBGA	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.3ns 165-Pin FBGA	对比