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IS43R32800D-5BLI备选型号: IS43R32400E-4BL

IS43R32800D-5BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
表面贴装
144-LFBGA
144
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
144
EAR99
AUTO/SELF REFRESH
8542.32.00.24
2.3V~2.7V
BOTTOM
1
2.5V
0.8mm
144
2.5V
2.7V
2.3V
256Mb 8M x 32
1
480mA
200MHz
700ps
DRAM
Parallel
32b
8MX32
3-STATE
32
15ns
14b
256 Mb
0.005A
COMMON
4096
248
248
12mm
1.4mm
无
ROHS3 Compliant
-
-
-
-
-
IS43R32400E-4BL

ISSI, Integrated Silicon Solution Inc

DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM

8 Weeks
-
表面贴装
144-LFBGA
144
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
144
-
AUTO/SELF REFRESH
-
2.4V~2.6V
BOTTOM
1
2.5V
0.8mm
-
-
2.6V
2.4V
128Mb 4M x 32
1
-
250MHz
700ps
DRAM
Parallel
32b
4MX32
-
32
16ns
-
-
-
-
-
-
-
12mm
1.4mm
-
ROHS3 Compliant
YES
260
未说明
SYNCHRONOUS
134217728 bit
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43R32400E-4BL	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM	对比
	IS43R32400E-5BL	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM	对比
	IS43R32400E-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	144-LFBGA	DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM	对比