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IS45S16320D-6CTLA1备选型号: IS42S16400J-6TL

IS45S16320D-6CTLA1

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 512M-Bit 32M x 16 3.3V 54-Pin TSOP-II

8 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
54
54-TSOP II
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
85°C
-40°C
3V~3.6V
166MHz
Parallel
512Mb 32M x 16
166MHz
5.4ns
DRAM
Parallel
16b
166MHz
3.6V
3V
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16400J-6TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64M PARALLEL 54TSOP

6 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
54
-
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
-
-
3.3V
-
-
64Mb 4M x 16
166MHz
5.4ns
DRAM
Parallel
16b
-
3.6V
3V
ROHS3 Compliant
Tin
表面贴装
100mA
54
EAR99
AUTO/SELF REFRESH
DUAL
1
0.8mm
100mA
1
4MX16
3-STATE
16
14b
64 Mb
COMMON
4096
1248FP
1248
NO
YES
22.22mm
1.2mm
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16160G-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 256M 16Mx16 166MHz SDR SDRAM, 3.3V	对比
	IS42S16400J-6TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	MT48LC32M8A2P-6A:G	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256M-Bit 32Mx8 3.3V 54-Pin TSOP-II	对比