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IS46R16320E-6BLA2备选型号: IS43R16320E-6BL

IS46R16320E-6BLA2

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V/2.6V 60-Pin TFBGA

10 Weeks
表面贴装
60-TFBGA
60
Volatile
-40°C~105°C TA
Tray
活跃
3 (168 Hours)
2.3V~2.7V
512Mb 32M x 16
700ps
DRAM
Parallel
15ns
13b
512 Mb
166MHz
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS43R16320E-6BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V/2.6V 60-Pin TFBGA

8 Weeks
表面贴装
60-TFBGA
60
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
2.3V~2.7V
512Mb 32M x 16
700ps
DRAM
Parallel
15ns
13b
512 Mb
166MHz
ROHS3 Compliant
YES
60
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
BOTTOM
未说明
1
2.5V
1mm
未说明
2.7V
2.3V
1
SYNCHRONOUS
32MX16
16
13mm
1.2mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16320E-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V/2.6V 60-Pin TFBGA	对比
	IS43R16320E-6BL	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V/2.6V 60-Pin TFBGA	对比