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IS61LPS12836A-250TQL备选型号: 71V25761S183PFGI

IS61LPS12836A-250TQL

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 250MHZ 100TQFP

12 Weeks
表面贴装
100-LQFP
YES
100
Volatile
225mA
0°C~70°C TA
Tray
e3
yes
活跃
3 (168 Hours)
100
3A991.B.2.A
Matte Tin (Sn) - annealed
流水线结构
3.3V
QUAD
260
1
0.65mm
40
4.5Mb 128K x 36
4
250MHz
2.6ns
SRAM
Parallel
128KX36
3-STATE
36
17b
4.5 Mb
0.07A
COMMON
Synchronous
36b
3.135V
20mm
1.6mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
71V25761S183PFGI

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.3ns 100-Pin TQFP

12 Weeks
-
TQFP
-
100
183MHz
350mA
-
Bulk
e3
yes
活跃
3 (168 Hours)
100
-
Matte Tin (Sn) - annealed
流水线结构
3.3V
QUAD
260
1
0.65mm
30
512kB
1
-
3.3 ns
-
-
-
3-STATE
-
17b
4.5 Mb
0.035A
COMMON
Synchronous
36b
3.135V
20mm
-
无
符合RoHS标准
表面贴装
2009
85°C
-40°C
鸥翼
183MHz
INDUSTRIAL
Parallel
3.465V
14mm
1.4mm
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	71V35761S183PFGI	Integrated Device Technology (IDT)	存储器	TQFP	SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM	对比
	71V25761S183PFG	Integrated Device Technology (IDT)	存储器	TQFP	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.3ns 100-Pin TQFP	对比
	71V25761S183PFGI	Integrated Device Technology (IDT)	存储器	TQFP	SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 3.3ns 100-Pin TQFP	对比