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IS61WV25616BLL-10BLI备选型号: IS61LV25616AL-10BLI

IS61WV25616BLL-10BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 48MINIBGA

8 Weeks
表面贴装
48-TFBGA
YES
48
Volatile
45mA
-40°C~85°C TA
Tray
e1
yes
活跃
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3.3V
BOTTOM
260
1
0.75mm
40
2.5/3.3V
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
10ns
18b
4 Mb
0.009A
COMMON
Asynchronous
16b
2V
3.6V
2.4V
900μm
8.1mm
6.1mm
无
ROHS3 Compliant
-
-
IS61LV25616AL-10BLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA

8 Weeks
表面贴装
48-TFBGA
-
48
Volatile
110mA
-40°C~85°C TA
Tray
e1
yes
活跃
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3.3V
BOTTOM
260
1
0.75mm
40
-
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
10ns
18b
4 Mb
-
COMMON
Asynchronous
16b
2V
3.63V
-
600μm
10mm
8mm
无
ROHS3 Compliant
表面贴装
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61WV5128EDBLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	36-TFBGA	4Mb, high-Speed/low Power, async With Ecc, 512K X 8, 10Ns/2.4V-3.6V, 36 Ball Mbga (6X8 Mm), Leadfree	对比
	IS61LV25616AL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA	对比