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IS61WV25616EDBLL-8BLI备选型号: 71V416L15BEI

IS61WV25616EDBLL-8BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 48TFBGA

8 Weeks
YES
48-TFBGA
表面贴装
48
Volatile
Tray
-40°C~85°C TA
e3
yes
活跃
3 (168 Hours)
48
Matte Tin (Sn)
3V~3.6V
BOTTOM
225
1
0.75mm
未说明
不合格
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
16
8ns
18b
4 Mb
0.006A
8 ns
COMMON
2V
3.63V
2.97V
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V416L15BEI

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray

12 Weeks
-
TFBGA
-
48
RAM, SDR, SRAM - Asynchronous
-
-
e0
no
活跃
4 (72 Hours)
48
Tin/Lead (Sn63Pb37)
3.3V
BOTTOM
225
1
0.75mm
20
-
512kB
1
-
-
3-STATE
-
-
18b
4 Mb
-
-
COMMON
3V
3.6V
3V
9mm
符合RoHS标准
表面贴装
160mA
2013
85°C
-40°C
BALL
INDUSTRIAL
Parallel
15 ns
Asynchronous
16b
9mm
1.2mm
无
含铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61LV25616AL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA	对比
	71V416L15BEI	Integrated Device Technology (IDT)	存储器	TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray	对比