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IS61WV3216BLL-12TLI备选型号: 71V016SA12PHGI

IS61WV3216BLL-12TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 512K PARALLEL 44TSOP II

8 Weeks
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
45mA
-40°C~85°C TA
Tray
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn)
3.3V
DUAL
260
1
0.8mm
40
512Kb 32K x 16
1
SRAM
Parallel
3-STATE
16
12ns
15b
512 kb
0.00005A
COMMON
Asynchronous
16b
3.63V
2.97V
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
71V016SA12PHGI

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube/Tray

12 Weeks
表面贴装
-
TSOP
44
RAM, SRAM - Asynchronous
160mA
-
-
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn) - annealed
3.3V
DUAL
260
1
0.8mm
30
128kB
1
-
-
3-STATE
-
-
16b
1 Mb
-
COMMON
Asynchronous
16b
3.6V
3V
无
符合RoHS标准
2011
85°C
-40°C
鸥翼
INDUSTRIAL
Parallel
12 ns
3V
18.41mm
10.16mm
1mm
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	71V016SA12PHG	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM	对比
	71V016SA12PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube/Tray	对比
	71V016SA12PHG8	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R	对比