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IS62WV102416BLL-25MI备选型号: IS61WV51216BLL-10MLI

IS62WV102416BLL-25MI

ISSI, Integrated Silicon Solution Inc

SRAM 16M (1Mx16) 25ns Async SRAM

表面贴装
48-TFBGA
YES
48
Volatile
-40°C~85°C TA
Tray
e0
no
最后一次购买
3 (168 Hours)
48
3A991.B.2.A
Tin/Lead (Sn/Pb)
8542.32.00.41
3.3V
BOTTOM
未说明
1
0.75mm
未说明
不合格
2.5/3.3V
16Mb 1M x 16
SRAM
Parallel
1MX16
3-STATE
16
25ns
0.0012A
16777216 bit
25 ns
COMMON
2.4V
3.6V
2.4V
11mm
1.2mm
9mm
Non-RoHS Compliant
-
-
-
-
-
-
-
-
-
IS61WV51216BLL-10MLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns 48-Pin Mini-BGA

表面贴装
48-TFBGA
YES
48
Volatile
-40°C~85°C TA
Tray
e1
yes
活跃
3 (168 Hours)
48
-
Tin/Silver/Copper (Sn/Ag/Cu)
-
3.3V
BOTTOM
260
1
0.75mm
40
-
2.5/3.3V
8Mb 512K x 16
SRAM
Parallel
-
3-STATE
16
10ns
0.02A
-
-
COMMON
-
3.6V
2.4V
-
-
-
ROHS3 Compliant
8 Weeks
95mA
1
19b
8 Mb
Asynchronous
16b
无
无铅
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	IS61WV25616BLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 4M PARALLEL 48MINIBGA	对比
	IS61WV51216BLL-10MLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns 48-Pin Mini-BGA	对比
	IS61WV12816DBLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 10ns 48-Pin Mini-BGA	对比