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IS62WV5128BLL-55BI备选型号: IS61WV2568EDBLL-10BLI

IS62WV5128BLL-55BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 36MINIBGA

表面贴装
36-TFBGA
YES
36
Volatile
-40°C~85°C TA
Tray
e0
no
活跃
2 (1 Year)
36
Tin/Lead (Sn/Pb)
2.5V~3.6V
BOTTOM
1
2.8V
0.75mm
36
3.3V
3.6V
2.5V
4Mb 512K x 8
1
SRAM
Parallel
3-STATE
8
55ns
19b
4 Mb
55 ns
COMMON
8mm
无
Non-RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61WV2568EDBLL-10BLI

ISSI, Integrated Silicon Solution Inc

SRAM 2Mb,High-Speed,Async with ECC,256K x 8,10ns,2.4V-3.6V, 36 Ball mBGA (6x8mm), RoHS

表面贴装
36-TFBGA
YES
36
Volatile
-40°C~85°C TA
Tray
e1
-
活跃
3 (168 Hours)
36
锡银铜
2.4V~3.6V
BOTTOM
1
3.3V
0.75mm
36
-
3.6V
2.4V
2Mb 256K x 8
-
SRAM
Parallel
3-STATE
8
10ns
-
-
10 ns
COMMON
8mm
-
ROHS3 Compliant
8 Weeks
3A991.B.2.A
流水线结构
8542.32.00.41
260
10
不合格
2.5/3.3V
256KX8
0.006A
2097152 bit
2V
1.2mm
6mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS63LV1024L-12BLI	ISSI, Integrated Silicon Solution Inc	存储器	36-TFBGA	IC SRAM 1M PARALLEL 36MINIBGA	对比
	IS61WV5128BLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	36-TFBGA	IC SRAM 4M PARALLEL 36MINIBGA	对比
	IS61WV2568EDBLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	36-TFBGA	SRAM 2Mb,High-Speed,Async with ECC,256K x 8,10ns,2.4V-3.6V, 36 Ball mBGA (6x8mm), RoHS	对比