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IS62WV5128DBLL-45TLI备选型号: AS6C4008A-55TIN

IS62WV5128DBLL-45TLI

ISSI, Integrated Silicon Solution Inc

SRAM 4Mb 512K x 8 45ns Async SRAM

表面贴装
32-TFSOP (0.724, 18.40mm Width)
YES
32
Volatile
20mA
-40°C~85°C TA
Tray
Discontinued
3 (168 Hours)
32
3V
DUAL
1
0.5mm
2.5/3.3V
4Mb 512K x 8
1
SRAM
Parallel
3-STATE
8
45ns
19b
4 Mb
0.000007A
45 ns
COMMON
Asynchronous
8b
3.6V
2.3V
20mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
AS6C4008A-55TIN

Alliance Memory, Inc.

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM

表面贴装
32-TFSOP (0.724, 18.40mm Width)
YES
32
Volatile
-
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
32
3V
DUAL
1
0.5mm
-
4Mb 512K x 8
1
SRAM
Parallel
-
8
55ns
19b
4 Mb
-
55 ns
-
-
-
3.6V
2.7V
-
-
ROHS3 Compliant
8 Weeks
2012
e3/e6
yes
PURE MATTE TIN/TIN BISMUTH
260
40
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS6C4008-55TIN	Alliance Memory, Inc.	存储器	32-TFSOP (0.724, 18.40mm Width)	ALLIANCE MEMORY AS6C4008-55TIN SRAM, 4MB, 2.7V-5.5V, 512KX8, TSOP32	对比
	IS61WV5128BLS-25TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 44TSOP2	对比
	AS6C4008A-55TIN	Alliance Memory, Inc.	存储器	32-TFSOP (0.724, 18.40mm Width)	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	对比