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IS63WV1024BLL-12BLI备选型号: IS61WV6416DBLL-10BLI

IS63WV1024BLL-12BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1M PARALLEL 48MINIBGA

8 Weeks
表面贴装
表面贴装
48-TFBGA
48
Volatile
-40°C~85°C TA
Tray
e1
yes
活跃
2 (1 Year)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3V~3.6V
BOTTOM
260
1
3.3V
0.75mm
40
48
3.3V
3.63V
2.97V
1Mb 128K x 8
1
45mA
SRAM
Parallel
3-STATE
8
12ns
17b
1 Mb
0.00005A
COMMON
Asynchronous
8b
8mm
无
ROHS3 Compliant
-
-
-
-
IS61WV6416DBLL-10BLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 48-Pin Mini-FBGA

8 Weeks
-
表面贴装
48-TFBGA
48
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
48
-
2.4V~3.6V
BOTTOM
-
1
3V
0.75mm
-
48
-
3.6V
2.4V
1Mb 64K x 16
1
55mA
SRAM
Parallel
3-STATE
16
10ns
16b
1 Mb
0.000055A
COMMON
Asynchronous
16b
8mm
-
ROHS3 Compliant
YES
不合格
2.5/3.3V
2V
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61LV6416-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 1M PARALLEL 48MINIBGA	对比
	IS61WV6416BLL-12BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 1M PARALLEL 48MINIBGA	对比
	AS6C1016-55BIN	Alliance Memory, Inc.	存储器	48-TFBGA	SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 48-Pin TFBGA	对比