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IS64WV12816DBLL-12CTLA3备选型号: IS61WV12816DBLL-10TLI-TR

IS64WV12816DBLL-12CTLA3

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 12ns Automotive 44-Pin TSOP-II

10 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
YES
44
Volatile
60mA
-40°C~125°C TA
Tray
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn) - annealed
3.3V
DUAL
260
1
0.8mm
10
2.5/3.3V
2Mb 128K x 16
1
SRAM
Parallel
3-STATE
16
12ns
17b
2 Mb
COMMON
Asynchronous
16b
2V
3.6V
2.4V
无
ROHS3 Compliant
-
IS61WV12816DBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 10ns 44-Pin TSOP-II T/R

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
YES
44
Volatile
65mA
-40°C~85°C TA
Tape & Reel (TR)
e3
yes
活跃
3 (168 Hours)
44
哑光锡
3V~3.6V
DUAL
225
1
0.8mm
-
2.5/3.3V
2Mb 128K x 16
1
SRAM
Parallel
3-STATE
16
10ns
17b
2 Mb
COMMON
Asynchronous
16b
2V
3.6V
2.4V
无
ROHS3 Compliant
0.00007A
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61WV12816EDBLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	2Mb, High-Speed, Async with ECC, 128K x 16, 10ns, 2.4V-3.6V, 44 Pin TSOP II, Leadfree	对比
	CY7C1011CV33-12ZSXE	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM 2Mb 12ns3.3V 128Kx16 Fast Async SRAM	对比
	IS61WV12816DBLL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 10ns 44-Pin TSOP-II T/R	对比