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IS64WV25616EDBLL-10BA3备选型号: IS62WV12816BLL-55BLI

IS64WV25616EDBLL-10BA3

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 48TFBGA

表面贴装
48-TFBGA
YES
48
Volatile
-40°C~125°C TA
Tray
最后一次购买
3 (168 Hours)
48
3A991.B.2.A
8542.32.00.41
3V
BOTTOM
1
0.75mm
不合格
2.5/3.3V
4Mb 256K x 16
SRAM
Parallel
256KX16
3-STATE
16
10ns
0.015A
4194304 bit
AEC-Q100
10 ns
COMMON
2V
3.6V
2.4V
8mm
1.2mm
6mm
Non-RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS62WV12816BLL-55BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 48MINIBGA

表面贴装
48-TFBGA
-
48
Volatile
-40°C~85°C TA
Tray
活跃
2 (1 Year)
48
-
-
3.3V
BOTTOM
1
0.75mm
-
-
2Mb 128K x 16
SRAM
Parallel
-
3-STATE
16
55ns
-
-
-
55 ns
COMMON
1V
3.6V
2.5V
8mm
-
-
ROHS3 Compliant
8 Weeks
表面贴装
3mA
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
260
40
1
16b
17b
2 Mb
Asynchronous
16b
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61LV25616AL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA	对比
	IS62WV12816BLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 2M PARALLEL 48MINIBGA	对比