登录 / 注册

产品

输入型号/关键词

IXTZ550N055T2备选型号: FDB0105N407L

IXTZ550N055T2

IXYS

N Channel 55 V 550 A 1 mOhm TrenchT2 GigaMOS Power Mosfet - DE475

18 Weeks
表面贴装
表面贴装
DE475
475
SILICON
550A Tc
-55°C~175°C TJ
Tube
FRFET®, SupreMOS®
2010
yes
活跃
1 (Unlimited)
6
EAR99
1mOhm
雪崩额定
DUAL
FLAT
未说明
未说明
6
R-PDFP-F6
不合格
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
ISOLATED
N-Channel
SWITCHING
1m Ω @ 100A, 10V
4V @ 250μA
40000pF @ 25V
595nC @ 10V
55V
±20V
550A
1650A
55V
3000 mJ
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDB0105N407L

ON Semiconductor

FAIRCHILD SEMICONDUCTOR FDB0105N407L MOSFET Transistor, N Channel, 460 A, 40 V, 0.0006 ohm, 10 V, 2.8 VNew

16 Weeks
表面贴装
表面贴装
TO-263-7, D2Pak (6 Leads + Tab)
7
-
460A Tc
-55°C~175°C TJ
Tape & Reel (TR)
PowerTrench®
-
yes
活跃
1 (Unlimited)
-
EAR99
-
-
-
-
245
未说明
-
-
-
-
-
-
N-Channel
-
0.8m Ω @ 50A, 10V
4V @ 250μA
23100pF @ 20V
291nC @ 10V
-
±20V
460A
-
-
-
ROHS3 Compliant
-
ACTIVE (Last Updated: 4 days ago)
1.312g
e3
Tin (Sn)
not_compliant
1
Single
3.8W
45 ns
2.8V
20V
40V
175°C
4.9mm
无SVHC
添加型号

分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	FDB0105N407L	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-7, D2Pak (6 Leads + Tab)	FAIRCHILD SEMICONDUCTOR FDB0105N407L MOSFET Transistor, N Channel, 460 A, 40 V, 0.0006 ohm, 10 V, 2.8 VNew	对比
	BSC010N04LSATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	8-PowerTDFN	INFINEON BSC010N04LSMOSFET Transistor, N Channel, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V	对比
	IRFS7430TRL7PP	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-7, D2Pak (6 Leads + Tab)	MOSFET N-CH 40V 240A D2PAK	对比