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M45PE80-VMP6G备选型号: M25P80-VMN3PB

M45PE80-VMP6G

Micron Technology Inc.

MICRON M45PE80-VMP6GFlash Memory, Low Voltage, Page Erasable, Byte Alterability, 8 MB, 1M x 8bit, 25 MHz, Serial, SPI

4 Weeks
表面贴装
表面贴装
8-VDFN Exposed Pad
8
Non-Volatile
-40°C~85°C TA
Tray
1998
yes
Obsolete
3 (168 Hours)
8
SMD/SMT
EAR99
2.7V~3.6V
DUAL
260
1
3V
1.27mm
30
M45PE80
8
3.3V
2.7V
SPI, Serial
8Mb 1M x 8
4mA
75MHz
12 ns
FLASH
SPI
8
15ms, 3ms
1b
8 Mb
0.00001A
Synchronous
8b
SPI
100000 Write/Erase Cycles
20
HARDWARE/SOFTWARE
6mm
1mm
无SVHC
无
ROHS3 Compliant
-
-
-
-
M25P80-VMN3PB

Micron Technology Inc.

NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin SOIC N Tube

-
-
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
Non-Volatile
-40°C~125°C TA
Tray
2013
yes
Obsolete
3 (168 Hours)
8
-
EAR99
2.7V~3.6V
DUAL
260
1
-
1.27mm
30
M25P80
8
3.3V
2.7V
SPI, Serial
8Mb 1M x 8
8mA
75MHz
8 ns
FLASH
SPI
1
15ms, 5ms
1b
8 Mb
0.0001A
Synchronous
8b
SPI
100000 Write/Erase Cycles
20
HARDWARE/SOFTWARE
4.9mm
1.75mm
-
无
ROHS3 Compliant
YES
AEC-Q100
15ms
256B
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图片	产品型号	品牌	分类	封装	描述	对比
	M25P80-VMN3PB	Micron Technology Inc.	存储器	8-SOIC (0.154, 3.90mm Width)	NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin SOIC N Tube	对比