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MB85R1002ANC-GE1备选型号: CY7C1041CV33-8ZSXI

MB85R1002ANC-GE1

Fujitsu Electronics America, Inc.

FUJITSU MB85R1002ANC-GE1 FRAM, 1M, PARALLEL, 3V, 48TSOP

12 Weeks
表面贴装
48-TFSOP (0.488, 12.40mm Width)
48
48-TSOP
Non-Volatile
-40°C~85°C TA
Tray
1999
活跃
2 (1 Year)
85°C
-40°C
3V~3.6V
Parallel
1Mb 64K x 16
150ns
FRAM
Parallel
150ns
3.6V
3V
Unknown
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CY7C1041CV33-8ZSXI

Cypress Semiconductor Corp

SRAM 4Mb 8ns 256K x 16 Fast Async SRAM

15 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
-
Volatile
-40°C~85°C TA
Tray
1996
Obsolete
3 (168 Hours)
-
-
3.3V
-
4Mb 256K x 16
-
SRAM
Parallel
8ns
3.63V
2.97V
-
ROHS3 Compliant
无铅
表面贴装
100mA
e4
44
Nickel/Palladium/Gold (Ni/Pd/Au)
DUAL
260
1
0.8mm
1MHz
30
CY7C1041
1
18b
4 Mb
8 ns
Asynchronous
16b
1.044mm
18.52mm
10.262mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	CY7C1021DV33-10ZSXI	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM, 1MBIT, PARALLEL, 10NS, 44TSOP	对比
	CY7C1041CV33-8ZSXI	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM 4Mb 8ns 256K x 16 Fast Async SRAM	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比