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MR2A16AYS35备选型号: IS41LV16256C-35TLI

MR2A16AYS35

Everspin Technologies Inc.

IC RAM 4M PARALLEL 44TSOP2

10 Weeks
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Non-Volatile
155mA
0°C~70°C TA
Tray
2003
活跃
3 (168 Hours)
44
EAR99
8542.32.00.71
3.3V
DUAL
1
0.8mm
4Mb 256K x 16
105mA
RAM
Parallel
16b
256KX16
16
35ns
4 Mb
0.028A
35 ns
16b
3.6V
3V
18.41mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
-
-
IS41LV16256C-35TLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip EDO 4M-Bit 256Kx16 3.3V 40-Pin TSOP-II

-
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width), 40 Leads
40
Volatile
230mA
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
40
EAR99
8542.32.00.02
3.3V
DUAL
1
0.8mm
4Mb 256K x 16
-
DRAM
Parallel
16b
256KX16
16
-
4 Mb
-
-
-
3.6V
3V
18.41mm
1.2mm
无
ROHS3 Compliant
-
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
1
18ns
9b
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图片	产品型号	品牌	分类	封装	描述	对比
	CY62146EV30LL-45ZSXI	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	CYPRESS SEMICONDUCTOR - CY62146EV30LL-45ZSXI - SRAM, 4MB, 256KX16, 3V, TSOPII-44	对比
	IS41LV16256C-35TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width), 40 Leads	DRAM Chip EDO 4M-Bit 256Kx16 3.3V 40-Pin TSOP-II	对比
	IS41LV16257C-35TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width), 40 Leads	DRAM 4M, 3.3V, 35ns 256Kx16 FP DRAM	对比