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MT46V64M8P-5B:J备选型号: IS43R16320D-5TLI

MT46V64M8P-5B:J

Micron Technology Inc.

DRAM Chip DDR SDRAM 512Mbit 64Mx8 2.6V 66-Pin TSOP

4 Weeks
Tin
表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
0°C~70°C TA
Tray
2011
e3
活跃
3 (168 Hours)
66
EAR99
AUTO/SELF REFRESH
8542.32.00.28
2.5V~2.7V
DUAL
260
1
2.6V
0.65mm
30
MT46V64M8
66
2.5V
2.7V
2.6V
512Mb 64M x 8
1
230mA
200MHz
700ps
DRAM
Parallel
8b
64MX8
3-STATE
8
15ns
15b
512 Mb
0.005A
400MHz
COMMON
8192
248
248
22.22mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
IS43R16320D-5TLI

ISSI, Integrated Silicon Solution Inc

DRAM 512M (32Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
-
表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
-40°C~85°C TA
Tray
-
e3
活跃
3 (168 Hours)
66
EAR99
AUTO/SELF REFRESH
8542.32.00.28
2.5V~2.7V
DUAL
260
1
2.6V
0.65mm
40
-
66
2.5V
2.7V
2.6V
512Mb 32M x 16
1
430mA
200MHz
700ps
DRAM
Parallel
16b
32MX16
3-STATE
16
15ns
15b
512 Mb
0.025A
-
COMMON
8192
248
248
22.22mm
1.2mm
无
ROHS3 Compliant
-
yes
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16320D-5TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 512M (32Mx16) 200MHz 2.5v DDR SDRAM	对比
	MT46V32M16TG-5B:J	Micron Technology Inc.	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 512Mbit 32Mx16 2.6V 66-Pin TSOP	对比