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MT48LC16M16A2P-6A:G备选型号: IS42S16160G-7TL

MT48LC16M16A2P-6A:G

Micron Technology Inc.

DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II

4 Weeks
Tin
表面贴装
表面贴装
54-TSOP (0.400, 10.16mm Width)
54
TG/P
Volatile
100mA
0°C~70°C TA
Tray
2012
e3
yes
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
3.3V
DUAL
260
1
0.8mm
30
MT48LC16M16A2
256Mb 16M x 16
1
167MHz
5.4ns
DRAM
Parallel
16b
16MX16
3-STATE
12ns
15b
256 Mb
0.0025A
COMMON
85°C
3.6V
3V
70°C
8192
1.2mm
22.22mm
10.16mm
无
ROHS3 Compliant
无铅
IS42S16160G-7TL

ISSI, Integrated Silicon Solution Inc

DRAM 256M 16Mx16 143MHz SDR SDRAM, 3.3V

6 Weeks
-
表面贴装
表面贴装
54-TSOP (0.400, 10.16mm Width)
54
-
Volatile
130mA
0°C~70°C TA
Tray
-
-
-
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
3.3V
DUAL
-
1
0.8mm
-
-
256Mb 16M x 16
1
143MHz
5.4ns
DRAM
Parallel
16b
16MX16
3-STATE
-
15b
256 Mb
0.004A
COMMON
-
3.6V
3V
-
8192
1.05mm
22.42mm
10.29mm
无
ROHS3 Compliant
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比
	IS42S16160G-7TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 256M 16Mx16 143MHz SDR SDRAM, 3.3V	对比
	MT48LC32M8A2P-6A:G	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256M-Bit 32Mx8 3.3V 54-Pin TSOP-II	对比