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MT48LC32M16A2P-75:C备选型号: IS42S16320B-75ETLI

MT48LC32M16A2P-75:C

Alliance Memory, Inc.

IC DRAM 512M PARALLEL 54TSOP

表面贴装
54-TSOP (0.400, 10.16mm Width)
54-TSOP II
Volatile
0°C~70°C TA
Tray
2007
Discontinued
4 (72 Hours)
70°C
0°C
3V~3.6V
133MHz
Parallel
512Mb 32M x 16
133MHz
5.4ns
DRAM
Parallel
15ns
ROHS3 Compliant
无铅
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IS42S16320B-75ETLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TSOP-II

表面贴装
54-TSOP (0.400, 10.16mm Width)
-
Volatile
-40°C~85°C TA
Tray
-
Obsolete
3 (168 Hours)
-
-
3V~3.6V
-
-
512Mb 32M x 16
133MHz
5.5ns
DRAM
Parallel
-
符合RoHS标准
-
表面贴装
54
e3
yes
54
EAR99
哑光锡
AUTO/SELF REFRESH
DUAL
255
1
3.3V
0.8mm
10
54
3.3V
3.6V
3V
1
180mA
16b
32MX16
3-STATE
16
15b
512 Mb
0.004A
COMMON
8192
1248FP
1248
1.2mm
22.22mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	MT48LC16M16A2P-7E:G	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256Mbit 16Mx16 3.3V Automotive 54-Pin TSOP-II	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比
	IS42S16320B-75ETLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 512M-Bit 32Mx16 3.3V 54-Pin TSOP-II	对比