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MT49H16M18SJ-25:B备选型号: IS61NLP12836EC-200B3LI

MT49H16M18SJ-25:B

Micron Technology Inc.

DRAM Chip RLDRAM2 288M-Bit 16Mx18 1.8V 144-Pin FBGA

13 Weeks
144-TBGA
YES
表面贴装
144
Volatile
0°C~95°C TC
Tray
2015
Obsolete
3 (168 Hours)
144
自动刷新
1.8V
BOTTOM
未说明
1
1mm
未说明
MT49H16M18
288Mb 16M x 18
1
SYNCHRONOUS
20ns
DRAM
Parallel
16MX18
18
20b
288 Mb
400MHz
1.9V
1.7V
1.2mm
18.5mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61NLP12836EC-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5M PARALLEL 165TFBGA

12 Weeks
165-TBGA
YES
表面贴装
165
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
165
-
3.3V
BOTTOM
260
1
1mm
10
-
4.5Mb 128K x 36
-
-
3.1ns
SRAM
Parallel
128KX36
36
-
-
-
3.465V
3.135V
1.2mm
15mm
ROHS3 Compliant
e1
3A991.B.2.A
Tin/Silver/Copper (Sn/Ag/Cu)
8542.32.00.41
不合格
2.5/3.33.3V
200MHz
3-STATE
0.085A
4718592 bit
COMMON
3.14V
13mm
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