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MT49H32M9SJ-25:B备选型号: MT49H16M18CSJ-25:B

MT49H32M9SJ-25:B

Micron Technology Inc.

DRAM Chip RLDRAM2 228M-Bit 32Mx9 1.8V 144-Pin FBGA

8 Weeks
表面贴装
144-TFBGA
YES
144
Volatile
0°C~95°C TC
Tray
2015
Obsolete
3 (168 Hours)
144
EAR99
自动刷新
1.7V~1.9V
BOTTOM
未说明
1
1.8V
1mm
未说明
1.8V
1.9V
1.7V
288Mb 32M x 9
1
SYNCHRONOUS
20ns
DRAM
Parallel
32MX9
9
21b
228 Mb
400MHz
18.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
MT49H16M18CSJ-25:B

Micron Technology Inc.

DRAM Chip RLDRAM2 288M-Bit 16Mx18 1.8V 144-Pin FBGA

8 Weeks
表面贴装
144-TBGA
-
144
Volatile
0°C~95°C TC
Tray
2015
Obsolete
3 (168 Hours)
-
-
-
1.7V~1.9V
-
-
-
-
-
-
1.8V
-
-
288Mb 16M x 18
-
-
20ns
DRAM
Parallel
-
-
20b
288 Mb
400MHz
-
-
ROHS3 Compliant
144-FBGA (18.5x11)
95°C
0°C
Parallel
400MHz
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	MT49H8M36BM-33:B	Micron Technology Inc.	存储器	144-TFBGA	DRAM Chip RLDRAM 288M-Bit 8Mx36 1.8V 144-Pin mBGA Tray	对比
	MT49H8M36SJ-25:B	Micron Technology Inc.	存储器	144-TFBGA	DRAM Chip RLDRAM2 228M-Bit 8Mx36 1.8V 144-Pin FBGA	对比
	MT49H16M18CSJ-25:B	Micron Technology Inc.	存储器	144-TBGA	DRAM Chip RLDRAM2 288M-Bit 16Mx18 1.8V 144-Pin FBGA	对比