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MT49H8M36SJ-25:B备选型号: IS61NLP12836EC-200B3LI

MT49H8M36SJ-25:B

Micron Technology Inc.

DRAM Chip RLDRAM2 228M-Bit 8Mx36 1.8V 144-Pin FBGA

8 Weeks
表面贴装
144-TFBGA
YES
144
Volatile
0°C~95°C TC
Tray
2015
活跃
3 (168 Hours)
144
EAR99
自动刷新
1.7V~1.9V
BOTTOM
1
1.8V
1mm
1.8V
1.9V
1.7V
288Mb 8M x 36
1
SYNCHRONOUS
20ns
DRAM
Parallel
8MX36
36
21b
228 Mb
400MHz
18.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61NLP12836EC-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5M PARALLEL 165TFBGA

12 Weeks
表面贴装
165-TBGA
YES
165
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
165
3A991.B.2.A
-
3.135V~3.465V
BOTTOM
1
3.3V
1mm
-
3.465V
3.135V
4.5Mb 128K x 36
-
-
3.1ns
SRAM
Parallel
128KX36
36
-
-
-
15mm
1.2mm
ROHS3 Compliant
e1
Tin/Silver/Copper (Sn/Ag/Cu)
8542.32.00.41
260
10
165
不合格
2.5/3.33.3V
200MHz
3-STATE
0.085A
4718592 bit
COMMON
3.14V
13mm
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图片	产品型号	品牌	分类	封装	描述	对比
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	MT49H32M9BM-33:B	Micron Technology Inc.	存储器	144-TFBGA	DRAM Chip RLDRAM 288M-Bit 32Mx9 1.8V 144-Pin mBGA Tray	对比