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N02L6181AB28I备选型号: IS43DR81280B-25DBL

N02L6181AB28I

ON Semiconductor

IC SRAM 2M PARALLEL 48BGA

表面贴装
表面贴装
48-LFBGA
48
Volatile
-40°C~85°C TA
Tray
2008
Obsolete
3 (168 Hours)
48
1.65V~2.2V
BOTTOM
1
1.8V
0.75mm
unknown
N02L6181A
48
不合格
1.8V
2.2V
2Mb 128K x 16
1
SRAM
Parallel
3-STATE
16
85ns
17b
2 Mb
0.000005A
85 ns
COMMON
Asynchronous
16b
8mm
符合RoHS标准
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS43DR81280B-25DBL

ISSI, Integrated Silicon Solution Inc

DRAM 1G (128Mx8) 400MHz 1.8v DDR2 SDRAM

-
表面贴装
60-TFBGA
60
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
60
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
-
-
-
不合格
1.8V
1.9V
1Gb 128M x 8
1
DRAM
Parallel
3-STATE
8
15ns
17b
1 Gb
-
-
COMMON
-
-
10.5mm
ROHS3 Compliant
8 Weeks
YES
EAR99
AUTO/SELF REFRESH
8542.32.00.32
1.7V
240mA
SYNCHRONOUS
400MHz
400ps
8b
128MX8
8192
48
48
1.2mm
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图片	产品型号	品牌	分类	封装	描述	对比
	N02L63W3AB25IT	ON Semiconductor	存储器	48-LFBGA	IC SRAM 2M PARALLEL 48BGA	对比
	IS43DR81280B-25DBL	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 1G (128Mx8) 400MHz 1.8v DDR2 SDRAM	对比
	N02L63W3AB25I	ON Semiconductor	存储器	48-LFBGA	IC SRAM 2M PARALLEL 48BGA	对比