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RN4902FE,LF(CT备选型号: RN1962FE(TE85L,F)

RN4902FE,LF(CT

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

12 Weeks
表面贴装
表面贴装
SOT-563, SOT-666
ES6
3.005049mg
50V
Cut Tape (CT)
2014
活跃
1 (Unlimited)
100mW
NPN, PNP
2
100mW
1 NPN, 1 PNP - Pre-Biased (Dual)
300mV
100mA
50 @ 10mA 5V
500nA
300mV @ 250μA, 5mA
50V
50V
250MHz 200MHz
10V
10kOhms
100mA
10kOhms
符合RoHS标准
-
-
-
RN1962FE(TE85L,F)

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

-
表面贴装
表面贴装
SOT-563, SOT-666
-
-
50V
Cut Tape (CT)
2014
Obsolete
1 (Unlimited)
100mW
NPN
-
-
2 NPN - Pre-Biased (Dual)
300mV
100mA
50 @ 10mA 5V
100nA ICBO
300mV @ 250μA, 5mA
-
50V
250MHz
10V
10k Ω
100mA
10k Ω
符合RoHS标准
SILICON
unknown
Dual
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	DDC114EH-7	Diodes Incorporated	晶体管 - 双极（BJT）- 阵列 - 预偏置	SOT-563, SOT-666	TRANS 2NPN PREBIAS 0.15W SOT563	对比
	RN1910FE,LF(CT	Toshiba Semiconductor and Storage	晶体管 - 双极（BJT）- 阵列 - 预偏置	SOT-563, SOT-666	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor	对比
	RN1962FE(TE85L,F)	Toshiba Semiconductor and Storage	晶体管 - 双极（BJT）- 阵列 - 预偏置	SOT-563, SOT-666	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V	对比