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SIT1602BI-31-33N-8.192000Y备选型号: DSC1001CI2-008.1920

SIT1602BI-31-33N-8.192000Y

SiTIME

MEMS OSC XO 8.1920MHZ H/LV-CMOS

表面贴装
4-SMD, No Lead
2ns
55/45%
2ns
SiT1602B
-40°C~85°C
Strip
0.197Lx0.126W 5.00mmx3.20mm
e4
yes
活跃
1 (Unlimited)
XO (Standard)
Nickel/Palladium/Gold (Ni/Pd/Au)
HCMOS OUTPUT ALSO AVAILABLE; TR
3.3V
8.192MHz
±20ppm
HCMOS, LVCMOS
MEMS
4.5mA
8.192MHz
812.8μm
0.031 0.80mm
ROHS3 Compliant
-
-
-
-
-
-
DSC1001CI2-008.1920

Microchip Technology

MEMS OSC XO 8.1920MHZ CMOS SMD

表面贴装
4-SMD, No Lead
2ns
55/45%
2ns
DSC1001
-40°C~85°C
Tube
3.2mm x 2.5mm x 0.9mm
e4
-
活跃
3 (168 Hours)
XO (Standard)
Nickel/Palladium/Gold (Ni/Pd/Au)
ALSO OPERATES AT 2.5V AND 1.8V SUPPLY VOLTAGE
3.3V
8.192MHz
±25ppm
CMOS
MEMS
6.3mA
8.192MHz
889μm
0.035 0.90mm
ROHS3 Compliant
12 Weeks
Automotive grade
4
Standby (Power Down)
15μA
AEC-Q100
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图片	产品型号	品牌	分类	封装	描述	对比
	DSC1001CI2-008.1920	Microchip Technology	振荡器	4-SMD, No Lead	MEMS OSC XO 8.1920MHZ CMOS SMD	对比
	SIT1602BC-81-33E-7.372800X	SiTIME	振荡器	4-SMD, No Lead	OSC MEMS 7.3728MHZ LVCMOS SMD	对比
	SIT1602AC-12-33E-8.192000G	SiTIME	振荡器	4-SMD, No Lead	MEMS OSC XO 8.1920MHZ LVCMOS SMD	对比