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SIT1602BI-83-33S-4.000000Y备选型号: DSC1001BI1-004.0000

SIT1602BI-83-33S-4.000000Y

SiTIME

MEMS OSC XO 4.0000MHZ H/LV-CMOS

表面贴装
4-SMD, No Lead
2ns
2ns
55/45%
-40°C~85°C
Strip
SiT1602B
7.0mm x 5.0mm x 0.9mm
e4
yes
活跃
XO (Standard)
Nickel/Palladium/Gold (Ni/Pd/Au)
STANDBY; ENABLE/DISABLE FUNCTION; HCMOS OUTPUT ALSO AVAILABLE; TR
3.3V
4MHz
±50ppm
HCMOS, LVCMOS
Standby (Power Down)
MEMS
4.5mA
4MHz
990.6μm
0.039 1.00mm
ROHS3 Compliant
-
-
-
-
-
-
DSC1001BI1-004.0000

Microchip Technology

Mems Oscillator Low Power -40C-85C 50PPM, 4 Vdfn 3.2X5.0X0.9MM Tube

表面贴装
4-SMD, No Lead
2ns
2ns
55/45%
-40°C~85°C
Tube
DSC1001
0.197Lx0.126W 5.00mmx3.20mm
-
yes
活跃
XO (Standard)
-
ALSO OPERATES AT 2.5V AND 1.8V SUPPLY VOLTAGE
1.8V~3.3V
4MHz
±50ppm
CMOS
Enable/Disable
MEMS
6.3mA
4MHz
889μm
0.035 0.90mm
ROHS3 Compliant
12 Weeks
Automotive grade
3 (168 Hours)
4
15μA
AEC-Q100
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图片	产品型号	品牌	分类	封装	描述	对比
	SIT8008BC-83-33E-3.686400X	SiTIME	振荡器	4-SMD, No Lead	OSC MEMS 3.6864MHZ LVCMOS SMD	对比
	SIT1602BC-83-33E-4.000000X	SiTIME	振荡器	4-SMD, No Lead	OSC MEMS 4.0000MHZ LVCMOS SMD	对比
	DSC1001BI1-004.0000	Microchip Technology	振荡器	4-SMD, No Lead	Mems Oscillator Low Power -40C-85C 50PPM, 4 Vdfn 3.2X5.0X0.9MM Tube	对比