STB120N4LF6备选型号: IRL1404ZSTRLPBF

20 Weeks

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

表面贴装

表面贴装

4

SILICON

3V @ 250μA

125 ns

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Tape & Reel (TR)

-55°C~175°C TJ

e3

活跃

1 (Unlimited)

2

EAR99

4MOhm

Matte Tin (Sn) - annealed

鸥翼

245

STB120N

R-PSSO-G2

Single

增强型MOSFET

110W

DRAIN

15 ns

N-Channel

SWITCHING

4m Ω @ 40A, 10V

4300pF @ 25V

80nC @ 10V

95ns

±20V

45 ns

80A

1V

20V

40V

10.4mm

10.75mm

4.6mm

ROHS3 Compliant

无

无SVHC

无铅

-

-

-

-

-

-

-

-

-

12 Weeks

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

表面贴装

表面贴装

3

SILICON

2.7V @ 250μA

75A Tc

HEXFET®

Tape & Reel (TR)

-55°C~175°C TJ

e3

活跃

1 (Unlimited)

2

EAR99

3.1MOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

鸥翼

260

-

R-PSSO-G2

Single

增强型MOSFET

230W

DRAIN

19 ns

N-Channel

SWITCHING

3.1m Ω @ 75A, 10V

5080pF @ 25V

110nC @ 5V

180ns

±16V

49 ns

75mA

2.7V

16V

40V

9.65mm

10.668mm

4.826mm

ROHS3 Compliant

无

无SVHC

含铅

2006

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

40V

75A

30

200A

790A

220 mJ

39 ns