STB60NF06LT4备选型号: IRLZ44ZSTRLPBF

ACTIVE (Last Updated: 7 months ago)

12 Weeks

表面贴装

表面贴装

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

3

4.535924g

SILICON

60A Tc

-65°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

活跃

1 (Unlimited)

2

EAR99

16mOhm

Matte Tin (Sn) - annealed

LOW THRESHOLD, AVALANCHE RATED

60V

鸥翼

245

60A

30

STB60N

3

R-PSSO-G2

Single

增强型MOSFET

110W

DRAIN

35 ns

N-Channel

SWITCHING

14m Ω @ 30A, 10V

1V @ 250μA

2000pF @ 25V

66nC @ 4.5V

220ns

±15V

30 ns

60A

1V

15V

60V

240A

4.6mm

10.4mm

9.35mm

无SVHC

无

ROHS3 Compliant

无铅

-

-

-

-

-

-

12 Weeks

表面贴装

表面贴装

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

3

-

SILICON

51A Tc

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

e3

活跃

1 (Unlimited)

2

EAR99

13.5mOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

55V

鸥翼

260

51A

30

-

-

R-PSSO-G2

Single

增强型MOSFET

80W

DRAIN

14 ns

N-Channel

SWITCHING

13.5m Ω @ 31A, 10V

3V @ 250μA

1620pF @ 25V

36nC @ 5V

160ns

±16V

42 ns

51A

3V

16V

55V

204A

4.826mm

10.668mm

9.65mm

无SVHC

无

ROHS3 Compliant

Contains Lead, Lead Free

2010

55V

78 mJ

32 ns

3 V