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STGW80H65DFB备选型号: STGW60H65DRF

STGW80H65DFB

STMicroelectronics

Trans IGBT Chip N-CH 650V 120A 3-Pin(3 Tab) TO-247 Tube

ACTIVE (Last Updated: 7 months ago)
20 Weeks
通孔
通孔
TO-247-3
3
38.000013g
650V
1.6V
-55°C~175°C TJ
Tube
活跃
1 (Unlimited)
EAR99
469W
未说明
未说明
STGW80
Single
Standard
469W
N-CHANNEL
650V
120A
85 ns
2V @ 15V, 80A
沟渠现场停车
414nC
240A
84ns/280ns
2.1mJ (on), 1.5mJ (off)
20V
20.15mm
15.75mm
5.15mm
ROHS3 Compliant
无铅
-
-
-
STGW60H65DRF

STMicroelectronics

IGBT Transistors 60A 650V Field Stop Trench Gate IBGT

ACTIVE (Last Updated: 8 months ago)
32 Weeks
通孔
通孔
TO-247-3
-
6.500007g
650V
1.9V
-55°C~175°C TJ
Tube
活跃
1 (Unlimited)
EAR99
420W
-
-
STGW60
Single
Standard
420W
N-CHANNEL
650V
120A
19 ns
2.4V @ 15V, 60A
沟渠现场停车
217nC
240A
85ns/178ns
940μJ (on), 1.06mJ (off)
20V
-
-
-
ROHS3 Compliant
无铅
e3
Tin (Sn)
无
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	STGW60H65DRF	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	IGBT Transistors 60A 650V Field Stop Trench Gate IBGT	对比