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STH175N4F6-2AG备选型号: FDB9406-F085

STH175N4F6-2AG

STMicroelectronics

MOSFET N-CH 40V 120A H2PAK-2

ACTIVE (Last Updated: 7 months ago)
20 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
120A Tc
-55°C~175°C TJ
Cut Tape (CT)
Automotive, AEC-Q101, STripFET™ F6
活跃
1 (Unlimited)
EAR99
未说明
未说明
STH175
Single
24 ns
N-Channel
2.4m Ω @ 60A, 10V
4.5V @ 250μA
7735pF @ 20V
130nC @ 10V
40V
±20V
120A
20V
4.8mm
10.4mm
9.17mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDB9406-F085

ON Semiconductor

MOSFET N-CH 40V 110A TO263AB

ACTIVE (Last Updated: 1 week ago)
5 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
110A Tc
-55°C~175°C TJ
Cut Tape (CT)
Automotive, AEC-Q101, PowerTrench®
活跃
1 (Unlimited)
-
-
-
-
Single
28 ns
N-Channel
1.8m Ω @ 80A, 10V
4V @ 250μA
7710pF @ 25V
138nC @ 10V
-
±20V
110A
20V
-
-
-
ROHS3 Compliant
1.31247g
SILICON
e3
yes
2
Tin (Sn)
鸥翼
R-PSSO-G2
增强型MOSFET
176W
DRAIN
SWITCHING
48ns
20 ns
40V
无
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图片	产品型号	品牌	分类	封装	描述	对比
	FDB9406-F085	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 40V 110A TO263AB	对比
	IPB022N04LGATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans MOSFET N-CH 40V 90A 3-Pin(2 Tab) TO-263	对比