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VND7NV04TR-E备选型号: VND14NV04-E

VND7NV04TR-E

STMicroelectronics

MOSFET POWER 40V 6A DPAK

ACTIVE (Last Updated: 7 months ago)
20 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
TO-252-P032P
500 ns
-40°C~150°C TJ
Tape & Reel (TR)
OMNIFET II™, VIPower™
e3
活跃
3 (168 Hours)
2
EAR99
60mOhm
Tin (Sn)
60W
SINGLE
鸥翼
260
1
2.25mm
30
VND7N
3
R-PSSO-G2
1
N-Channel
9A
On/Off
100μA
低侧
60W
-10.5A
不需要
Non-Inverting
100 ns
通用型
470ns
45V
350 ns
6A
500mV
1:1
36V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
45V
9A
60m Ω (Max)
60mOhm
TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
500 mV
60mOhm
2.4mm
6.6mm
6.2mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
VND14NV04-E

STMicroelectronics

VND14NV04 Single Low Side 40 V 12 A 35 mOhm Power MosFet -TO-252-3

ACTIVE (Last Updated: 7 months ago)
20 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
-
25 μs
-40°C~150°C TJ
Tube
OMNIFET II™, VIPower™
e3
活跃
3 (168 Hours)
2
EAR99
35mOhm
Tin (Sn)
74W
SINGLE
鸥翼
260
1
2.25mm
30
VND14
3
R-PSSO-G2
-
N-Channel
12A
On/Off
100μA
低侧
74W
18A
不需要
Non-Inverting
1.5 μs
通用型
9.7μs
55V
10.2 μs
7A
2.5V
1:1
36V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
40V
18A
35m Ω (Max)
35mOhm
TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
-
-
2.63mm
6.6mm
6.2mm
无SVHC
无
ROHS3 Compliant
无铅
100μA
1
4.5 μs
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	RFD14N05SM9A	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	MOSFET N-CH 50V 14A DPAK	对比
	VND14NV04-E	STMicroelectronics	PMIC - 配电开关，负载驱动器	TO-252-3, DPak (2 Leads + Tab), SC-63	VND14NV04 Single Low Side 40 V 12 A 35 mOhm Power MosFet -TO-252-3	对比
	RFD14N05LSM	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	MOSFET N-CH 50V 14A TO-252AA	对比