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VNN1NV04PTR-E备选型号: ZXMS6001N3TA

VNN1NV04PTR-E

STMicroelectronics

MOSFET N-CH 40V 1.7A SOT223

ACTIVE (Last Updated: 7 months ago)
20 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
4
350 ns
-40°C~150°C TJ
Tape & Reel (TR)
OMNIFET II™, VIPower™
e3
活跃
3 (168 Hours)
4
EAR99
250mOhm
Matte Tin (Sn) - annealed
7W
DUAL
鸥翼
260
1
5V
2.3mm
30
VNN1NV
4
36V
N-Channel
3.5A
40V
On/Off
100μA
1.7A
低侧
7W
1.7A
不需要
Non-Inverting
70 ns
通用型
1.7A
170ns
45V
200 ns
1.7A
500mV
1:1
36V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
45V
1
1.7A
250m Ω (Max)
250mOhm
5.5 μs
TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
500 mV
1.9mm
6.7mm
3.7mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
ZXMS6001N3TA

Diodes Incorporated

MOSFET N-CH PROTECTED 60V SOT223

-
17 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
4
1
-40°C~150°C TJ
Tape & Reel (TR)
INTELLIFET®
e3
活跃
1 (Unlimited)
4
EAR99
675mOhm
Matte Tin (Sn)
1.5W
DUAL
鸥翼
260
-
-
-
40
ZXMS6001
4
-
N-Channel
1.1A
6V
On/Off
-
-
低侧
1.5W
1.1A
不需要
Non-Inverting
-
通用型
-
27ns
60V
26 ns
1.1A
-
1:1
60V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
-
-
-
520m Ω
520mOhm
-
-
-
1.65mm
6.7mm
3.7mm
无SVHC
无
ROHS3 Compliant
无铅
SILICON
2008
no
1.5W
1
增强型MOSFET
SOURCE
SWITCHING
1V
550 mJ
METAL-OXIDE SEMICONDUCTOR
自动重启
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