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W29N04GVSIAA备选型号: MT29F1G08ABADAWP-ITX:D

W29N04GVSIAA

Winbond Electronics

IC FLASH 4G PARALLEL 48TSOP

10 Weeks
表面贴装
48-TFSOP (0.488, 12.40mm Width)
YES
Non-Volatile
-40°C~85°C TA
Tray
2016
yes
活跃
3 (168 Hours)
48
2.7V~3.6V
DUAL
1
3.3V
0.5mm
R-PDSO-G48
3.6V
2.7V
4Gb 512M x 8
ASYNCHRONOUS
FLASH
Parallel
512MX8
8
25ns
4294967296 bit
3.3V
18.4mm
1.2mm
12mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F1G08ABADAWP-ITX:D

Micron Technology Inc.

IC 1GB FLASH MEMORY 25US 48-TSOP

5 Weeks
表面贴装
48-TFSOP (0.724, 18.40mm Width)
-
Non-Volatile
-40°C~85°C TA
Tray
2012
-
活跃
3 (168 Hours)
48
2.7V~3.6V
DUAL
1
3.3V
0.5mm
-
3.6V
2.7V
1Gb 128M x 8
-
FLASH
Parallel
128MX8
8
-
-
-
18.4mm
1.2mm
12mm
ROHS3 Compliant
表面贴装
48
e3
TIN
MT29F1G08
48
3.3V
1 Gb
0.0001A
25 ns
8b
NO
NO
YES
1K
128K
2Kwords
YES
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	MT29F1G08ABAEAWP-IT:E	Micron Technology Inc.	存储器	48-TFSOP (0.724, 18.40mm Width)	SLC NAND Flash Parallel 3.3V 1Gbit 128M x 8bit	对比
	MT29F1G08ABADAWP-ITX:D	Micron Technology Inc.	存储器	48-TFSOP (0.724, 18.40mm Width)	IC 1GB FLASH MEMORY 25US 48-TSOP	对比