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W632GG8KB-11备选型号: MT41K128M8DA-107:J

W632GG8KB-11

Winbond Electronics

IC SDRAM 2GBIT 933MHZ 78BGA

表面贴装
78-TFBGA
YES
78
Volatile
0°C~95°C TC
Tray
2016
Discontinued
3 (168 Hours)
78
EAR99
AUTO/SELF REFRESH
8542.32.00.36
1.425V~1.575V
BOTTOM
未说明
1
1.5V
0.8mm
未说明
78
不合格
1.575V
1.5V
1.425V
2Gb 256M x 8
1
SYNCHRONOUS
933MHz
20ns
DRAM
Parallel
256MX8
3-STATE
8
0.019A
2147483648 bit
COMMON
8192
48
48
10.5mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
MT41K128M8DA-107:J

Micron Technology Inc.

DRAM Chip DDR3L SDRAM 1G-Bit 128Mx8 1.35V 78-Pin FBGA

表面贴装
78-TFBGA
-
78
Volatile
0°C~95°C TC
Tray
2011
活跃
3 (168 Hours)
78
-
AUTO/SELF REFRESH
-
1.283V~1.45V
BOTTOM
-
1
1.35V
0.8mm
-
-
不合格
1.45V
-
1.283V
1Gb 128M x 8
1
SYNCHRONOUS
933MHz
20ns
DRAM
Parallel
128MX8
3-STATE
8
-
-
COMMON
8192
8
8
10.5mm
1.2mm
-
ROHS3 Compliant
16 Weeks
Copper, Silver, Tin
表面贴装
1.35V
8b
14b
1 Gb
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43TR82560BL-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 2G-Bit 256M x 8 1.35V 78-Pin TWBGA	对比
	MT41K256M8DA-107:K	Micron Technology Inc.	存储器	78-TFBGA	DRAM Chip DDR3L SDRAM 2G-Bit 256Mx8 1.35V 78-Pin FBGA	对比