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W9412G6KH-4备选型号: N25S818HAT21I

W9412G6KH-4

Winbond Electronics

IC DRAM 128M PARALLEL 66TSOP II

表面贴装
YES
66-TSSOP (0.400, 10.16mm Width)
Volatile
0°C~70°C TA
2016
Tray
Obsolete
3 (168 Hours)
66
AUTO/SELF REFRESH
2.4V~2.7V
DUAL
1
0.65mm
R-PDSO-G66
2.7V
2.4V
128Mb 8M x 16
1
SYNCHRONOUS
250MHz
48ns
DRAM
Parallel
8MX16
16
12ns
134217728 bit
22.22mm
10.16mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N25S818HAT21I

ON Semiconductor

IC SRAM 256K SPI 16MHZ 8TSSOP

表面贴装
-
8-TSSOP (0.173, 4.40mm Width)
Volatile
-40°C~85°C TA
2008
Tube
活跃
3 (168 Hours)
8
-
1.7V~1.95V
DUAL
1
0.65mm
-
-
-
256Kb 32K x 8
1
-
16MHz
32 ns
SRAM
SPI
-
8
-
-
4.4mm
-
-
ROHS3 Compliant
ACTIVE (Last Updated: 4 days ago)
52 Weeks
表面贴装
8
e3
yes
EAR99
Tin (Sn)
1.8V
N25S818HA
8
1.8V
Parallel, SPI, Serial
10mA
3-STATE
无卤素
1b
256 kb
5e-7A
SEPARATE
Synchronous
8b
无
无铅
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